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MPSA14 / MMBTA14 / PZTA14
Discrete POWER & Signal Technologies
MPSA14
MMBTA14
C
PZTA14
C
E C B
E C B
TO-92
E
SOT-23
Mark: 1N
B
SOT-223
NPN Darlington Transistor
This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05.
Absolute Maximum Ratings*
Symbol
VCES VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25C unless otherwise noted
Parameter
Value
30 30 10 1.2 -55 to +150
Units
V V V A C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJC RJA
TA = 25C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSA14 625 5.0 83.3 200
Max
*MMBTA14 350 2.8 357 **PZTA14 1,000 8.0 125
Units
mW mW/C C/W C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
(c) 1997 Fairchild Semiconductor Corporation
A14, Rev B
MPSA14 / MMBTA14 / PZTA14
NPN Darlington Transistor
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CES ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current IC = 100 A, IB = 0 VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 30 100 100 V nA nA
ON CHARACTERISTICS*
hFE VCE(sat) VBE(on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage IC = 10 mA, VCE = 5.0 V IC = 100 mA, VCE = 5.0 V IC = 100 mA, IB = 0.1 mA IC = 100 mA, VCE = 5.0 V 10,000 20,000 1.5 2.0 V V
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 5 V, f = 100 MHz 125 MHz
*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
Typical Characteristics
Typical Pulsed Current Gain vs Collector Current
250 200 VCE = 5V 150
25 C
hFE - TYPICAL PULSED CURRENT GAIN (K)
VCESAT- COLLECTOR EMITTER VOLTAGE (V)
Collector-Emitter Saturation Voltage vs Collector Current
1.6 = 1000 1.2
- 40 C 25C 125 C
125 C
0.8
100
- 40 C
50 0 0.001
0.4
0.01 0.1 I C - COLLECTOR CURRENT (A)
1
0
1
10 100 I C - COLLECTOR CURRENT (mA)
1000
VBEON - BASE EMITTER ON VOLTAGE (V)
VBESAT- BASE EMITTER VOLTAGE (V)
Base-Emitter Saturation Voltage vs Collector Current
2 1.6
- 40 C
Base Emitter ON Voltage vs Collector Current
2 1.6 1.2 0.8 0.4 0 VCE = 5V
= 1000
- 40 C 25 C 125 C
1.2 0.8 0.4 0
25 C 125 C
1
10 100 I C - COLLECTOR CURRENT (mA)
1000
1
10 100 I C - COLLECTOR CURRENT (mA)
1000
MPSA14 / MMBTA14 / PZTA14
NPN Darlington Transistor
(continued)
Typical Characteristics
(continued)
100
VCB = 30V
BVCER - BREAKDOWN VOLTAGE (V)
Collector-Cutoff Current vs Ambient Temperature
ICBO- COLLECTOR CURRENT (nA)
Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base
62.5 62 61.5 61 60.5 60 59.5 0.1
10
1
0.1
0.01 25
50 75 100 T A- AMBIENT TEMPERATURE ( C)
125
1
10
100
1000
RESISTANCE (k )
Input and Output Capacitance vs Reverse Voltage
f = 1.0 MHz
20
f T - GAIN BANDWIDTH PRODUCT (MHz)
Gain Bandwidth Product vs Collector Current
50
Vce = 5V
40
CAPACITANCE (pF)
10
30
Cib
5
20
Cob
10
2 0.1
1
10
100
0 1 10 20 50 100 150
Vce - COLLECTOR VOLTAGE(V)
IC - COLLECTOR CURRENT (mA)
Power Dissipation vs Ambient Temperature
1 PD - POWER DISSIPATION (W)
0.75
SOT-223 TO-92
0.5
SOT-23
0.25
0
0
25
50 75 100 o TEMPERATURE ( C)
125
150

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